Defect Analysis and Thermal Effects of Nanolasers and Emitters

2026-07-22

Photonic integrated circuits (PIC) are becoming a key contender for the next generation of communication. Two main barriers exist for the seamless integration of electronics and photonics, the integration of active photonic components on the silicon chip, and their downsizing towards electronic dimensions. III-Vs with their tunable direct bandgaps are the materials of choice for integrated lasers on Si. IBM has achieved room-temperature III-V optically pumped microdisk lasers monolithically on Si. Defects in the III-V material when grown on Si is a main factor in reducing the efficiency of optical devices, and can also lead to catastrophic failure of devices. Hence the ability to analyze and preferably control their impact is essential for integrated photonics. Another equally grand challenge for advanced technologies today is thermal management of photonic devices on Si, at all levels of system integration from the package down to individual devices. Whereas this is true for electronics, thermal effects are even more severe for photonic devices. Although downscaling of photonic components is ultimately limited by diffraction, thermal effects (wavelength shift and self-heating), in practice play a great role. The present proposal addresses these two great challenges in integrated photonics: a) Defect analysis of III/V nanoscale photonic devices – morphological and device characterization to understand the impact of material defects on device, reliability studies. b) Nanoscale thermal management of active III-V lasers on Si – by a combination of in-situ nanoscale thermal characterization and thermal stress simulation. To address this, I will apply my extensive experience and skills in thermal characterization and defect analysis which complement the existing competences at IBM, on III-V materials, device fabrication and scanning thermal microscopy.

Switzerland

2026-02-01