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Developing CdTe Homojunctions Applying High Throughput Deposition

Sector: Advanced Electronics • Location: Pullman, Washington, United States of America

Source: Department of Energy (DOE)

Project
Closed

This project is developing new methods to achieve simultaneously high charge carrier density and lifetime in cadmium telluride (CdTe) and cadmium selenium telluride (CdSeTe) photovoltaic (PV) materials. Reducing defects at the p-n junction the interface between positively charged (p-type) and negatively charged (n-type) semiconductor material in CdTe and CdSeTe PV materials can significantly impro

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The project “Developing CdTe Homojunctions Applying High Throughput Deposition” is an infrastructure initiative in the Advanced Electronics sector, located in Pullman, Washington, United States of America. Taiyo aggregates data on it from Department of Energy (DOE).

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Description

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This project is developing new methods to achieve simultaneously high charge carrier density and lifetime in cadmium telluride (CdTe) and cadmium selenium telluride (CdSeTe) photovoltaic (PV) materials. Reducing defects at the p-n junction the interface between positively charged (p-type) and negatively charged (n-type) semiconductor material in CdTe and CdSeTe PV materials can significantly improve cell performance. This project will use a technique called fast close-space sublimation epitaxy, which can directly deposit n-type CdTe or CdSeTe onto p-type CdTe or CdSeTe films, which will yield significantly fewer defects at the p-n junction than existing methods.

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