Developing CdTe Homojunctions Applying High Throughput Deposition
Sector: Advanced Electronics • Location: Pullman, Washington, United States of America
Source: Department of Energy (DOE)
This project is developing new methods to achieve simultaneously high charge carrier density and lifetime in cadmium telluride (CdTe) and cadmium selenium telluride (CdSeTe) photovoltaic (PV) materials. Reducing defects at the p-n junction the interface between positively charged (p-type) and negatively charged (n-type) semiconductor material in CdTe and CdSeTe PV materials can significantly impro
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Status
Original status | closed |
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Taiyo last update | 00-00-0000 |
Available timestamps | 00-00-0000 |
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Contact
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Description
Description | This project is developing new methods to achieve simultaneously high charge carrier density and lifetime in cadmium telluride (CdTe) and cadmium selenium telluride (CdSeTe) photovoltaic (PV) materials. Reducing defects at the p-n junction the interface between positively charged (p-type) and negatively charged (n-type) semiconductor material in CdTe and CdSeTe PV materials can significantly improve cell performance. This project will use a technique called fast close-space sublimation epitaxy, which can directly deposit n-type CdTe or CdSeTe onto p-type CdTe or CdSeTe films, which will yield significantly fewer defects at the p-n junction than existing methods. |
Original sub-sector | Obfuscated |
Original Currency | USD |
Original budget | 000000000000000 |
Procurement method | Obfuscated Data |
Budget | 000000000000000 |
Location
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Source
Source reliability | High |
Data quality score | 100% |
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URL | obfuscated_data,obfuscateddata.com |
More Details
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