Development of all thin-film PERovskite on CIS TANDem photovoltaics
Sector: Solar • Location: Belgium, Germany, Switzerland, Netherlands, France, Australia
Source: EU Funding & Tenders Portal
A realistic approach to increase the efficiency of photovoltaic (PV) devices above the Shockley-Queisser single-junction limit is the construction of tandem devices. PERCISTAND focuses on the development of advanced materials and processes for all thin film perovskite on chalcogenide tandem devices. This tandem configuration is at an early stage of development today. The PERCISTAND emphasis is on
Project Information FAQ
Project Information
Want to explore the full details? View the full report
Participants
Sponsoring Agency | Obfuscated Data |
Company | Obfuscated Data |
Status
Original status | ended |
Taiyo status | Obfuscated Data |
Taiyo last update | 00-00-0000 |
Available timestamps | 00-00-0000 |
Available timestamp type | Obfuscated Data |
Contact
Contact name | Obfuscated Data |
Phone | 0000000000 |
ObfuscatedData@email.com | |
Address | Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data |
Description
Description | A realistic approach to increase the efficiency of photovoltaic (PV) devices above the Shockley-Queisser single-junction limit is the construction of tandem devices. PERCISTAND focuses on the development of advanced materials and processes for all thin film perovskite on chalcogenide tandem devices. This tandem configuration is at an early stage of development today. The PERCISTAND emphasis is on 4-terminal tandem solar cell and module prototype demonstration on glass substrates, but also current- and voltage-matched 2-terminal proof-of-concept device structures are envisaged. Key research activities are the development and optimization of top wide band gap perovskite and bottom low band gap CuInSe2 devices, suitable transparent conductive oxides, and integration into tandem configurations. The focus is on obtaining high efficiency, stability and large-area manufacturability, at low production cost and environmental footprint. Efficiency target is 30 % at cell level, and 25 % at module level. Reliability and stability, tested in line with International Electrotechnical Commission (IEC) standards, must be similar as commercially available PV technologies. High manufacturability means that all technologies applied are scalable to 20×20 cm2, using sustainable and low-cost materials and processes. The cost and environmental impact will be assessed in line with International Organization for Standardization (ISO), and must be competitive with existing commercial PV technologies. Such a tandem device significantly outperforms not only the stand-alone perovskite and chalcogenide devices, but also best single-junction silicon devices. The development will be primarily on glass substrates, but also applicable to flexible substrates and thus interesting for building integrated photovoltaic (BIPV) solutions, an important market for thin film PV. Hence, the outcome has high potential to strengthen and regain the EU leadership in thin film PV research and manufacturing. |
Original sub-sector | Obfuscated |
Original Currency | USD |
Original budget | 000000000000000 |
Procurement method | Obfuscated Data |
Budget | 000000000000000 |
Location
Region | Obfuscated |
Country | Obfuscated |
State | Obfuscated Data |
County | Obfuscated |
Location | Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data |
Source
Source reliability | High |
Data quality score | 100% |
Source | Obfuscated Data |
URL | obfuscated_data,obfuscateddata.com |
More Details
Project Type | Obfuscated Data |
Article Published Date | Obfuscated Data |
