DGIST Semiconductor Fab Advancement Project
Sector: Advanced Electronics • Location: Daegu, South Korea
Source: 동아사이언스
DGIST's Next-Generation Sensor and Semiconductor Research Institute was selected for a new project under the 2026 Nano and Materials Technology Development Program – Infrastructure Construction (Fab Advancement) and the High-Experience Professional Workforce Utilization Project for Supporting Semiconductor Technology Development. The project aims to strengthen industry-academia-research technical
- Status
- Closed
- Sector
- Advanced Electronics, Education, Manufacturing (Industrial)
- Location
- Daegu, South Korea
- Updated
- 22 Jul 2026
- Source
- 동아사이언스
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Project Information
Participants
| Not available for this record. |
Status
Original status | awarded |
Taiyo status | Closed |
Taiyo last update | 2026-07-22 |
Contact
| Not available for this record. |
Description
Description | DGIST's Next-Generation Sensor and Semiconductor Research Institute was selected for a new project under the 2026 Nano and Materials Technology Development Program – Infrastructure Construction (Fab Advancement) and the High-Experience Professional Workforce Utilization Project for Supporting Semiconductor Technology Development. The project aims to strengthen industry-academia-research technical support based on public semiconductor fabs, including process technology development, fab operation efficiency improvement, equipment and facility stabilization, device support, design, analysis, characterization, MPW fabrication, consulting, and on-site technical support related to semiconductor technology development. |
Original sector | Technology |
Location
Country | South Korea |
City | Daegu |
Source
Source | 동아사이언스 |
URL |
More Details
Record type | Project |
Sector | Advanced Electronics, Education, Manufacturing (Industrial) |
Article published date | 2026-06-01 |
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