Digital RF Power - Time-Domain-RF-Power Signal Generation
Sector: Broadband • Location: Netherlands, Germany, Ireland
Source: EU Funding & Tenders Portal
Wireless communications has made fantastic progress. Yet, the gravest concern is the relentless exponential increase in energy consumption of next-generation networks that adopt massive multi-input/multi-output (mMIMO) technology (e.g., in 5G/6G). Without any major breakthroughs, these networks will devour a big portion of the global electricity production in 2030. The chief culprit is the incumbe
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Participants
Sponsoring Agency | Obfuscated Data |
Company | Obfuscated Data |
Status
Original status | forthcoming |
Taiyo status | Obfuscated Data |
Taiyo last update | 00-00-0000 |
Available timestamps | 00-00-0000 |
Available timestamp type | Obfuscated Data |
Contact
Contact name | Obfuscated Data |
Phone | 0000000000 |
ObfuscatedData@email.com | |
Address | Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data |
Description
Description | Wireless communications has made fantastic progress. Yet, the gravest concern is the relentless exponential increase in energy consumption of next-generation networks that adopt massive multi-input/multi-output (mMIMO) technology (e.g., in 5G/6G). Without any major breakthroughs, these networks will devour a big portion of the global electricity production in 2030. The chief culprit is the incumbent analog-intensive radio-frequency (RF) transmitter (TX) architecture of its front-end part, which invariably suffers from linearity/efficiency trade-offs and standby currents irrespective of data traffic. DISRUPT aims to bring new materials, devices, and design paradigm shifts by pioneering a revolutionary fully digital time-domain signal generation delivering high RF power that will finally profit from the (so-far mostly theoretical) 3000x performance advantage of III-Nitrides over Silicon. DISRUPTs breakthroughs will be: 1) Novel material and device concepts for the new “digital RF power” paradigm. 2) Merger of advanced CMOS with a to-be-developed (gate-)segmented III-N technology. This solution will utilize up to thousands of tiny low-VT III-N “digital” FET devices configured in switch-bank arrays that are individually controlled at picosecond accuracy by a CMOS controller through ultra-high-density flip-chip technology. This arrangement allows 3) distributed coherent signal generation, enabling a direct synthesis of nearly perfect high-power wideband TX waveforms with superior amplitude and phase control. As such, 4) new efficiency enhancement schemes will be pioneered. 5) Its CMOS-on-GaN nature will lead to seamless inclusion of 6) new: digital signal processing, clock generation, error detection, and artificial intelligence-based error correction, thereby reaching unprecedented system efficiencies. When successful, DISRUPT will enable a 50% reduction in the energy consumption of wireless networks compared to just following the expected development innovations. |
Original sub-sector | Obfuscated |
Original Currency | USD |
Original budget | 000000000000000 |
Procurement method | Obfuscated Data |
Budget | 000000000000000 |
Location
Region | Obfuscated |
Country | Obfuscated |
State | Obfuscated Data |
County | Obfuscated |
Location | Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data |
Source
Source reliability | High |
Data quality score | 100% |
Source | Obfuscated Data |
URL | obfuscated_data,obfuscateddata.com |
More Details
Project Type | Obfuscated Data |
Article Published Date | Obfuscated Data |
