logo

Dots-in-NANOWires by near-field illumination: novel single-photon sources for HYbRid quantum photonic circuits

Source: EU Funding & Tenders Portal

Project
Ongoing

Quantum photonic integrated circuits are ideal platforms for quantum computation and communication. A long-standing issue in their realization is the lack of a deterministic quantum light source compatible with silicon. Indeed, planar self-assembled III-V quantum dots (QDs) –which provide high-performance quantum light sources (i. e. single photons)– can hardly be grown on Si, and also lack the po

Project Information FAQ

Project Information

5 Q
The project "Dots-in-NANOWires by near-field illumination: novel single-photon sources for HYbRid quantum photonic circuits" is an infrastructure initiative in the Hydrogen, Telecommunications, Geothermal, Advanced Electronics, Government sector, located in N/A, Italy. Taiyo aggregates data from EU Funding & Tenders Portal, including information on sponsoring government bodies, EPCs, and contractors.

Want to explore the full details? View the full report

Participants

Sponsoring Agency

Obfuscated Data

Company

Obfuscated Data

Status

Original status

ongoing

Taiyo status

Obfuscated Data

Taiyo last update

00-00-0000

Available timestamps

00-00-0000

Available timestamp type

Obfuscated Data

Contact

Contact name

Obfuscated Data

Phone

0000000000

Email

ObfuscatedData@email.com

Address

Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data

Description

Description

Quantum photonic integrated circuits are ideal platforms for quantum computation and communication. A long-standing issue in their realization is the lack of a deterministic quantum light source compatible with silicon. Indeed, planar self-assembled III-V quantum dots (QDs) –which provide high-performance quantum light sources (i. e. single photons)– can hardly be grown on Si, and also lack the positioning control necessary for efficient post-growth III-V-on-Si hybrid integration. Nanowires (NWs), in contrast, are rod-shaped nanoscale semiconductors that can host intrinsically site-controlled III-V QDs and can even be grown on Si. However, QDs in NWs have yet to reach the performances of planar QDs, an issue that could be overcome by integrating QDs in NWs in photonic cavities. Such a solution is, at present, out of reach, because conventional creation of QDs during NW growth hinders their successful integration with cavities. The NANOWHYR project will allow the integration of QDs in NWs with cavities by realizing an unprecedented post-growth creation of QDs inside NWs. The new method consists of the incorporation of hydrogen in III-V nitride NWs whose bandgap can be controllably modified by hydrogen. Subsequent hydrogen removal by scanning near-field illumination will permit tuning the bandgap of the NW in a nanoscale region. This will allow us to form a QD in that region with a widely tunable energy. The deterministic control of the QD position and energy is the key that will enable us to efficiently integrate the QD with: A) planar photonic cavities fabricated on Si and B) vertical NW cavities grown on Si. This will lead to the breakthrough of a site-controlled, electrically-driven, telecom-friendly single photon source in Si photonic circuits. Moreover, this new strategy permits the modulation of semiconductor properties at the nanoscale, and it is thus expected to open new grounds in other research areas, such as photovoltaics and thermal energy converters.

Original sub-sector

Obfuscated

Original Currency

USD

Original budget

000000000000000

Procurement method

Obfuscated Data

Budget

000000000000000

Location

Region

Obfuscated

Country

Obfuscated

State

Obfuscated Data

County

Obfuscated

Location

Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data

Source

Source reliability

High

Data quality score

100%

Source

Obfuscated Data

URL

obfuscated_data,obfuscateddata.com

More Details

Project Type

Obfuscated Data

Article Published Date

Obfuscated Data