FLAG-ERA ETMOS Project
Sector: Advanced Electronics • Location: Italy, France, Slovakia, Hungary
Source: Compound Semiconductor
The FLAG-ERA ETMOS project focuses on developing ultra-fast diodes and transistors using 2D materials and wide-bandgap semiconductors like MoS2, SiC, and GaN. Researchers from various European institutions are collaborating to create heterojunction diodes with excellent rectification properties, aiming to enhance the functionalities of these semiconductors for high-power and high-frequency electro
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Participants
Sponsoring Agency | Obfuscated Data |
Company | Obfuscated Data |
Status
Original status | completed |
Taiyo status | Obfuscated Data |
Taiyo last update | 00-00-0000 |
Available timestamps | 00-00-0000 |
Available timestamp type | Obfuscated Data |
Contact
Contact name | Obfuscated Data |
Phone | 0000000000 |
ObfuscatedData@email.com | |
Address | Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data |
Description
Description | The FLAG-ERA ETMOS project focuses on developing ultra-fast diodes and transistors using 2D materials and wide-bandgap semiconductors like MoS2, SiC, and GaN. Researchers from various European institutions are collaborating to create heterojunction diodes with excellent rectification properties, aiming to enhance the functionalities of these semiconductors for high-power and high-frequency electronics. |
Original sub-sector | Obfuscated |
Original Currency | USD |
Original budget | 000000000000000 |
Procurement method | Obfuscated Data |
Budget | 000000000000000 |
Location
Region | Obfuscated |
Country | Obfuscated |
State | Obfuscated Data |
County | Obfuscated |
Location | Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data |
Source
Source reliability | High |
Data quality score | 100% |
Source | Obfuscated Data |
URL | obfuscated_data,obfuscateddata.com |
More Details
Project Type | Obfuscated Data |
Article Published Date | Obfuscated Data |
