GlobalFoundries Essex Junction Chip Plant Modernization
Sector: Advanced Electronics • Location: Essex Junction, Vermont, United States of America
Source: Dodge USA
Upgrade the existing Fab 9 chip plant, expand capacity. Create first U.S. facility capable of high-volume Manufacturing of next-generation gallium nitride semiconductors for use in power grids, data centers, smartphones, and electric vehicles. Part of the project entails developing an on-site solar energy system that would supply up to 9 % of the energy used at the plant.
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Participants
Sponsoring Agency | Obfuscated Data |
Company | Obfuscated Data |
Status
Original status | Pre-Design |
Taiyo status | Obfuscated Data |
Taiyo last update | 00-00-0000 |
Available timestamps | 00-00-0000 |
Available timestamp type | Obfuscated Data |
Contact
Contact name | Obfuscated Data |
Phone | 0000000000 |
ObfuscatedData@email.com | |
Address | Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data |
Description
Description | Upgrade the existing Fab 9 chip plant, expand capacity. Create first U.S. facility capable of high-volume Manufacturing of next-generation gallium nitride semiconductors for use in power grids, data centers, smartphones, and electric vehicles. Part of the project entails developing an on-site solar energy system that would supply up to 9 % of the energy used at the plant. |
Original sub-sector | Obfuscated |
Original Currency | USD |
Original budget | 000000000000000 |
Procurement method | Obfuscated Data |
Budget | 000000000000000 |
Location
Region | Obfuscated |
Country | Obfuscated |
State | Obfuscated Data |
County | Obfuscated |
Location | Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data |
Source
Source reliability | High |
Data quality score | 100% |
Source | Obfuscated Data |
URL | obfuscated_data,obfuscateddata.com |
More Details
Project Type | Obfuscated Data |
Article Published Date | Obfuscated Data |
