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Interdigitated Back Contact Polycrystalline Device

Sector: Metal • Location: Golden, Colorado, United States of America

Source: Department of Energy (DOE)

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The basic structure of polycrystalline thin-film devices like cadmium telluride and copper indium gallium selenide have not changed significantly over the past 20 years and consist of at least two discrete active layers to transmit, absorb, and separate photo-generated carriers. Though efforts to optimize layers in these structures have resulted in remarkable improvements, there are new efforts to

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The project “Interdigitated Back Contact Polycrystalline Device” is an infrastructure initiative in the Metal sector, located in Golden, Colorado, United States of America. Taiyo aggregates data on it from Department of Energy (DOE).

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The basic structure of polycrystalline thin-film devices like cadmium telluride and copper indium gallium selenide have not changed significantly over the past 20 years and consist of at least two discrete active layers to transmit, absorb, and separate photo-generated carriers. Though efforts to optimize layers in these structures have resulted in remarkable improvements, there are new efforts to develop a simpler structure that results in a cheaper and more reliable device. This project will investigate the creation of a device structure that consists of an interdigitated back contact solar cell-a solar cell with two metals-to establish the field necessary to separate electron-hole pairs absorbed by a single, cadmium telluride or selenide absorber that has a long lifetime and doesn't have window or buffer layers.

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