Magneto Plasmonic Assisted Room Temperature Valleytronic Transistor

ongoing

Modern information processing faces significant challenges, including high power consumption, speed saturation, and scaling limitations. Valleytronic transistors, exploiting the valley degree of freedom, offer energy-efficient operations by minimizing heat generation and increasing data densities. However, robust room-temperature valleytronic transistors are challenging due to strong intervalley scattering. This research aims to develop a groundbreaking magneto-plasmonic assisted room-temperature valleytronic transistor. The objective is to enhance the performance of room-temperature valley transistors through an innovative approach. The proposed method involves the combination of chiral plasmonic nanostructures with a ferromagnetic Fe3GaTe2 monolayer. The chiral plasmonic nanostructures are designed to selectively generate valley-polarized hot carriers in WS2, with their effectiveness further amplified by the magnetic proximity effect induced by Fe3GaTe2. This device can generate, propagate, detect, and manipulate valley information at room temperature, advancing energy-efficient electronic devices. This project could potentially mark a new milestone in the field of valleytronics. Warsaw University, with its state-of-the-art facilities and the expertise of Prof. Maciej Molas, provides the necessary resources and environment for the successful execution of this ambitious project. This research could revolutionize information processing and advance energy-efficient electronics. This research aligns closely with the objectives of the Work Programme by addressing the need for advancing energy-efficient electronic devices. This project aims to enhance sustainable and efficient information processing technologies by exploring valleytronic transistors and incorporating magneto-plasmonic assistance. Additionally, it will host Marie Curie fellows to promote international collaboration and knowledge exchange.