Next-Generation Indium Gallium Nitride Micro LEDs
Sector: Steel • Location: Sweden
Source: EU Funding & Tenders Portal
Our method of growing pure InGaN μLEDs is completely unique. We start with a layer of thin GaN on a substrate. This layer has the same high defect density that other existing technologies struggle with. Then we add a mask made of either silicon nitride or aluminum oxide introduced by us using a high-resolution lithography process. The mask contains tiny holes ca. 100 nm in diameter which become gr
- Status
- Closed
- Sector
- Steel, Metal, Commercial
- Location
- Sweden
- Updated
- 22 Jul 2026
- Source
- EU Funding & Tenders Portal
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Status
Original status | ended |
Taiyo status | Closed |
Taiyo last update | 2026-07-22 |
Contact
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Description
Description | Our method of growing pure InGaN μLEDs is completely unique. We start with a layer of thin GaN on a substrate. This layer has the same high defect density that other existing technologies struggle with. Then we add a mask made of either silicon nitride or aluminum oxide introduced by us using a high-resolution lithography process. The mask contains tiny holes ca. 100 nm in diameter which become growth sites for intrinsically defect-free InGaN pyramids. These pyramids are then reshaped into truncated hexagonal pyramids, aka InGaN platelets that are just 700 nm wide (effectively a nanoLED) and contain the active micro LED structure after regrowth on the top c-plane of the InGaN platelets. We can already grow the μLEDs on 2” wafers on a sapphire substrate, and we are developing new methods to grow 4” wafers on a silicon substrate. Our KPIs (pixel size <1 µm, internal quantum efficiency >3.5%, FWHM <50 nm, etc.) already outcompete current commercial options for sub-2 µm-pixel size. |
Location
Country | Sweden |
Source
Source | EU Funding & Tenders Portal |
URL |
More Details
Record type | Project |
Sector | Steel, Metal, Commercial |
Article published date | 2026-01-01 |
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