Question 1

What are the key details for the project “Nitride Electronic NeXt-Generation Technology (NEXT)”?

Accepted Answer

The project “Nitride Electronic NeXt-Generation Technology (NEXT)” is an infrastructure initiative in the Advanced Electronics sector, located in United States of America. Taiyo aggregates data on it from Grants.gov.

Question 2

What is the latest status of the project “Nitride Electronic NeXt-Generation Technology (NEXT)”?

Accepted Answer

The status recorded for “Nitride Electronic NeXt-Generation Technology (NEXT)” is archived.

Question 3

Who are the main government, EPC, and private stakeholders for “Nitride Electronic NeXt-Generation Technology (NEXT)”?

Accepted Answer

Taiyo maps the stakeholders of “Nitride Electronic NeXt-Generation Technology (NEXT)”: government bodies (Defence Advanced Research Projects Agency (DARPA), United States Department of Defense (DoD), US Government).

Question 4

Where can I verify the source and access all details for “Nitride Electronic NeXt-Generation Technology (NEXT)”?

Accepted Answer

This Taiyo project page references Grants.gov along with the original URL (https://www.grants.gov/web/grants/view-opportunity.html?oppId=43397). Taiyo standardizes official data into a consistent, searchable project profile.

Sponsoring Agency	Obfuscated Data
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Original status	archived
Taiyo status	Obfuscated Data
Taiyo last update	00-00-0000
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Contact name	Obfuscated Data
Phone	0000000000
Email	ObfuscatedData@email.com
Address	Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data

Description	Amendment 01: The purpose of this amendment is to revise the Proposal Due Date to 24 Feb 09. See the full conform BAA document attached (changes highlighted in yellow).Original Notice Below.DARPA is soliciting innovative research proposals in the area of advanced nitride electronics. Proposed research should investigate innovative approaches that enable revolutionary advances in nitride electronic devices and integrated circuits resulting in their ability to operate at very high frequencies while maintaining extremely favorable voltage breakdown characteristics. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. Full BAA document attached.All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to BAA09-16@darpa.mil.
Original sub-sector	Obfuscated
Original Currency	USD
Original budget	000000000000000
Procurement method	Obfuscated Data
Budget	000000000000000

Region	Obfuscated
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Location	Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data

Source reliability	High
Data quality score	100%
Source	Obfuscated Data
URL	obfuscated_data,obfuscateddata.com

Project Type	Obfuscated Data
Article Published Date	Obfuscated Data

Nitride Electronic NeXt-Generation Technology (NEXT)

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