OPtimization and integration of Dirac semimeTal-bIsmuth in spin-to-charge conversiON devices
Sector: Tunnel • Location: Spain
Source: EU Funding & Tenders Portal
The rise of electronic devices challenges sustainability, as nanometer-sized transistors are nearing their physical limits in addition to severe energy costs. New technologies are essential to meet the growing demands of consumer electronics. Spintronics is considered to be a leading solution to improve scalability and power efficiency, and shows potential not only in memory technologies but also
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Participants
Sponsoring Agency | Obfuscated Data |
Company | Obfuscated Data |
Status
Original status | forthcoming |
Taiyo status | Obfuscated Data |
Taiyo last update | 00-00-0000 |
Available timestamps | 00-00-0000 |
Available timestamp type | Obfuscated Data |
Contact
Contact name | Obfuscated Data |
Phone | 0000000000 |
ObfuscatedData@email.com | |
Address | Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data |
Description
Description | The rise of electronic devices challenges sustainability, as nanometer-sized transistors are nearing their physical limits in addition to severe energy costs. New technologies are essential to meet the growing demands of consumer electronics. Spintronics is considered to be a leading solution to improve scalability and power efficiency, and shows potential not only in memory technologies but also in logic operations, supported by recent advances in spin-based computation. Among them, one promising prototype is the magnetoelectric spin-orbit device by integrating non-volatile magnetic switching via magnetoelectric coupling with spin injection and spin-to-charge conversion. The main goal of OPTION is to realize such a functional device by exploring novel Dirac semimetals with large spin-to-charge conversion efficiency and high resistivity to improve the output voltage signal. To achieve this result, we will sputter and optimize high-quality Dirac semimetals to maximize spin-orbit coupling strength as well as resistivity; insert a tunnel barrier between high resistive Dirac semimetals and metallic ferromagnetic layers to ensure a large spin injection efficiency; verify the repeatable and stable voltage-driven magnetic switching of the multiferroic materials, and finally integrate different modules into a full structure. Within OPTION, we will employ kinds of film deposition facilities, structural and physical properties characterizations and advanced nanofabrication techniques for which the host institution is expert, such as high-vacuum sputtering and e-beam lithography. The ultimate scientific ambition of OPTION is to achieve power-efficient functional logic devices, thereby benchmarking novel sustainable computing paradigms and bridging the fundamental science and technological applications. Moreover, OPTION will provide high-quality, interdisciplinary research and transversal skills to an aspiring young researcher for the development of her career. |
Original sub-sector | Obfuscated |
Original Currency | USD |
Original budget | 000000000000000 |
Procurement method | Obfuscated Data |
Budget | 000000000000000 |
Location
Region | Obfuscated |
Country | Obfuscated |
State | Obfuscated Data |
County | Obfuscated |
Location | Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data |
Source
Source reliability | High |
Data quality score | 100% |
Source | Obfuscated Data |
URL | obfuscated_data,obfuscateddata.com |
More Details
Project Type | Obfuscated Data |
Article Published Date | Obfuscated Data |
