oPtoelectROnic Properties of Hybrid pErovskiTes

ended

Over recents years hybrid halide perovskites have attracted strong interest in the solar cell community as a result of their high-power conversion eciency and the opportunity to realise a low-cost as well as industry-scalable technology. Nevertheless, most of the progress has been through empirical device improvements, and a number of key questions still remain unanswered. Open issues include the optimal chemical composition of the materials, ion migration, scalable fabrication routes, device architecture and stability in operation. The goal of PROPHET is to directly relate the optoelectronic behaviour of metal halide perovskites to their chemical and morphological properties by investigating their photophysics on a range of different length and time scales. New approaches in the characterisation of the materials will be used in the action, leading to a deep understanding of the carrier transport and recombination processes. The host lab is at the forefront of the development of advanced characterisation methods for optoelectronic devices, particularly solar cells, with an outstanding expertise on hyperspectral luminescence and time resolved fluorescence imaging, which will be extensively used during the action. To further expand the capabilities of luminescence images datasets signal will be treated by multivariate statistical analysis, with the aim of identifying possible correlations between different features within the material. This innovative approach is expected to provide new insights and a more detailed and comprehensive knowledge about the local optoelectronics properties of halide perovskites. These techniques in combination with chemical and morphological characterisation methods will be used to investigate degradation processes under operational condition and the issues raised by the scaling-up of the cells. The results of the action are thus expected to gain insight and better guidelines for the right material choices as well as film processing.