Rapid Development of Disruptive Photovoltaic Technologies

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This project aims to demonstrate potentially-disruptive, novel photovoltaic absorbers by developing proof-of-concept device prototypes composed of defect-tolerant inorganic thin film oxide/nitride absorbers. Defect tolerance is the tendency of a semiconductor to maintain good transport and doping properties despite the presence of crystallographic defects and is a key property of promising photovoltaic materials. The project uses the rapid development approach, which combines high-throughput theory with accelerated experiments to rapidly optimize materials and architectures.