Russian 6.7nm X-ray Lithography Concept
Sector: Advanced Electronics • Location: Russia
Source: Frontier India
Russian scientists are developing a breakthrough X-ray lithography concept using gadolinium plasma and a 6.7 nm radiation source to enable domestic chip production at the 1–3 nanometer level. The project aims to leapfrog current EUV semiconductor technology by using a gas-based target system to reduce contamination and improve lithography system performance.
- Status
- Prospective
- Sector
- Advanced Electronics, Manufacturing (Industrial)
- Location
- Russia
- Updated
- 22 Jul 2026
- Source
- Frontier India
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Project Information
Participants
| Not available for this record. |
Status
Original status | experimental phase |
Taiyo status | Prospective |
Taiyo last update | 2026-07-22 |
Contact
| Not available for this record. |
Description
Description | Russian scientists are developing a breakthrough X-ray lithography concept using gadolinium plasma and a 6.7 nm radiation source to enable domestic chip production at the 1–3 nanometer level. The project aims to leapfrog current EUV semiconductor technology by using a gas-based target system to reduce contamination and improve lithography system performance. |
Original sector | Technology |
Location
Country | Russia |
Source
Source | Frontier India |
URL |
More Details
Record type | Project |
Sector | Advanced Electronics, Manufacturing (Industrial) |
Article published date | 2026-05-13 |
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