Silicon-based materials for the short-wave infrared range

ongoing

In the project Silfrared we propose to research a new technology for the fabrication of infrared (IR) photodetectors based on supersaturated silicon in combination with black silicon, for the near (NIR) and short wave (SWIR) infrared ranges, for low-level light or night vision applications. The unique combination of characteristics of this technology (CMOS compatibility, low cost fabrication, uncooled operation, high resolution and fast response time) provides strategic and competitive advantage with respect to existing technologies, providing the EU with improved capabilities in surveillance and reconnaissance operations. Knowledge on the properties and fabrication conditions of thick supersaturated silicon layers will be generated, including the analysis of microwave annealing as an innovative semiconductor processing technique, and the compatibility of these technologies with black silicon layers.