Silicon Carbide Semiconductor Facility in Odisha
Sector: Rail • Location: Odisha, India
Source: Trade Brains
A large Silicon Carbide (SiC) semiconductor facility is being developed in Odisha with a total project outlay of around ₹618 crore. The project aims to produce epitaxial wafers initially and eventually expand into full semiconductor device manufacturing. This facility is expected to support India's high-power semiconductor needs in defence, railways, EVs, renewable energy, and data centres.
- Status
- Under Construction
- Sector
- Rail, Power Generation (CCGT), Government, Advanced Electronics, Manufacturing (Industrial)
- Location
- Odisha, India
- Updated
- 22 Jul 2026
- Source
- Trade Brains
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Project Information
Participants
| Not available for this record. |
Status
Original status | under construction |
Taiyo status | Under Construction |
Taiyo last update | 2026-07-22 |
Contact
| Not available for this record. |
Description
Description | A large Silicon Carbide (SiC) semiconductor facility is being developed in Odisha with a total project outlay of around ₹618 crore. The project aims to produce epitaxial wafers initially and eventually expand into full semiconductor device manufacturing. This facility is expected to support India's high-power semiconductor needs in defence, railways, EVs, renewable energy, and data centres. |
Original sector | Industrial |
Budget |
Location
Country | India |
State | Odisha |
Source
Source | Trade Brains |
URL |
More Details
Record type | Project |
Sector | Rail, Power Generation (CCGT), Government, Advanced Electronics, Manufacturing (Industrial) |
Article published date | 2026-07-13 |
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