Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
Sector: Solar • Location: Ottawa, Ontario, Canada
Source: Nature
This project demonstrates a material system for intermediate band solar cells using InGaN/GaN quantum-dot-in-nanowire heterostructures grown directly on silicon. It aims to provide a lower cost, large-bandgap intermediate band solar cell platform, showcasing sequential two-photon current generation with sub-bandgap photons, which is essential for the operation of intermediate band solar cells.
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Company | Obfuscated Data |
Status
Original status | completed |
Taiyo status | Obfuscated Data |
Taiyo last update | 00-00-0000 |
Available timestamps | 00-00-0000 |
Available timestamp type | Obfuscated Data |
Contact
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Description
Description | This project demonstrates a material system for intermediate band solar cells using InGaN/GaN quantum-dot-in-nanowire heterostructures grown directly on silicon. It aims to provide a lower cost, large-bandgap intermediate band solar cell platform, showcasing sequential two-photon current generation with sub-bandgap photons, which is essential for the operation of intermediate band solar cells. |
Original sub-sector | Obfuscated |
Original Currency | USD |
Original budget | 000000000000000 |
Procurement method | Obfuscated Data |
Budget | 000000000000000 |
Location
Region | Obfuscated |
Country | Obfuscated |
State | Obfuscated Data |
County | Obfuscated |
Location | Obfuscated Data, Obfuscated data, obfuscated data, Obfuscated data |
Source
Source reliability | High |
Data quality score | 100% |
Source | Obfuscated Data |
URL | obfuscated_data,obfuscateddata.com |
More Details
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