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Ultra-High Operating Temperature Silicon Carbide-Matrix Solar Thermal Air Receivers Enabled by Additive Manufacturing (Ultra-HOTSSTAR)

Sector: Geothermal • Location: Niskayuna, New York, United States of America

Source: Department of Energy (DOE)

Project
Closed

The Ultra-HOTSSTAR project applies GE’s high-temperature manufacturing technologies to design volumetric silicon carbide (SiC) receivers to efficiently convert sunlight to thermal energy. SiC enables solar receivers to go beyond the temperature limits of metal alloys and will allow the team to design receivers appropriate for very-high-temperature industrial processes. In collaboration with Heliog

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The project “Ultra-High Operating Temperature Silicon Carbide-Matrix Solar Thermal Air Receivers Enabled by Additive Manufacturing (Ultra-HOTSSTAR)” is an infrastructure initiative in the Geothermal sector, located in Niskayuna, New York, United States of America. Taiyo aggregates data on it from Department of Energy (DOE).

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Description

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The Ultra-HOTSSTAR project applies GE’s high-temperature manufacturing technologies to design volumetric silicon carbide (SiC) receivers to efficiently convert sunlight to thermal energy. SiC enables solar receivers to go beyond the temperature limits of metal alloys and will allow the team to design receivers appropriate for very-high-temperature industrial processes. In collaboration with Heliogen, the team will use 3D-printing to optimize promising designs by improving manufacturability, lowering cost, and validating thermo-mechanical reliability under realistic conditions

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