Ultra-High Operating Temperature Silicon Carbide-Matrix Solar Thermal Air Receivers Enabled by Additive Manufacturing (Ultra-HOTSSTAR)
Sector: Geothermal • Location: Niskayuna, New York, United States of America
Source: Department of Energy (DOE)
The Ultra-HOTSSTAR project applies GE’s high-temperature manufacturing technologies to design volumetric silicon carbide (SiC) receivers to efficiently convert sunlight to thermal energy. SiC enables solar receivers to go beyond the temperature limits of metal alloys and will allow the team to design receivers appropriate for very-high-temperature industrial processes. In collaboration with Heliog
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Participants
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Status
Original status | closed |
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Taiyo last update | 00-00-0000 |
Available timestamps | 00-00-0000 |
Available timestamp type | Obfuscated Data |
Contact
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Description
Description | The Ultra-HOTSSTAR project applies GE’s high-temperature manufacturing technologies to design volumetric silicon carbide (SiC) receivers to efficiently convert sunlight to thermal energy. SiC enables solar receivers to go beyond the temperature limits of metal alloys and will allow the team to design receivers appropriate for very-high-temperature industrial processes. In collaboration with Heliogen, the team will use 3D-printing to optimize promising designs by improving manufacturability, lowering cost, and validating thermo-mechanical reliability under realistic conditions |
Original sub-sector | Obfuscated |
Original Currency | USD |
Original budget | 000000000000000 |
Procurement method | Obfuscated Data |
Budget | 000000000000000 |
Location
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Source
Source reliability | High |
Data quality score | 100% |
Source | Obfuscated Data |
URL | obfuscated_data,obfuscateddata.com |
More Details
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