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Uncooled Nanopillar Single-Photon Avalanche Diodes (NP-SPADs) at Telecommunication Wavelengths

Source: EU Funding & Tenders Portal

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High efficiency detection of single photons at telecommunication wavelengths (notably at 1.55 µm) is critical for emerging technologies, such as free-space and on-fiber quantum information processing, eye-safe and long-distance light detection and ranging (LiDAR), and highly sensitive remote sensing. This research project aims to meet this critical need by developing III-V nanopillar-based uncoole

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The project "Uncooled Nanopillar Single-Photon Avalanche Diodes (NP-SPADs) at Telecommunication Wavelengths" is an infrastructure initiative in the Telecommunications, Advanced Electronics, Education sector, located in N/A, United Kingdom (UK). Taiyo aggregates data from EU Funding & Tenders Portal, including information on sponsoring government bodies, EPCs, and contractors.

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Description

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High efficiency detection of single photons at telecommunication wavelengths (notably at 1.55 µm) is critical for emerging technologies, such as free-space and on-fiber quantum information processing, eye-safe and long-distance light detection and ranging (LiDAR), and highly sensitive remote sensing. This research project aims to meet this critical need by developing III-V nanopillar-based uncooled single-photon avalanche diodes (NP-SPADs), which are composed of nanostructured InAsP-InP Geiger-mode avalanche photodiodes (GmAPDs) with self-assembled plasmonic gratings, operating at 1.55 µm. Compared with commercially available InGaAs(P)-InP GmAPDs, the proposed device scheme significantly suppresses thermally generated carriers and trap state population by a factor of 20 to 100 due to the extremely small fill factor of nanopillar arrays (less than 5%). All the while, sufficient optical absorption is maintained via surface plasmon resonance by the plasmonic gratings. The sum combination of these unique capabilities offers the promise of achieving NP-SPADs with free-running mode operation, high photon detection efficiency (PDE; probability of detecting a single photon) of 10 – 20%, low dark count rate (DCR; rate of false detection) of ~50 Hz, and high photon count rate ≥5 MHz. If successful, this approach can drastically stimulate the development and commercialization of high performance semiconductor-based NP-SPADs, putting European Union (EU) at the forefront of cutting-edge technology in single photon detection.

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