CHIPS - Nanometer - scale Planar Films and Measurements

2026-11-03

SOURCES SOUGHT NOTICENotice ID : NIST - MML - 26 - SS02Title : CHIPS - Nanometer - scale Planar Films and MeasurementsGENERAL INFORMATIONThis is aSources Sought Notice ONLYand is issued formarket research purposesin accordance withFAR Part 10 . This notice doesnotconstitute a Request for Proposal ( RFP ), Request for Quotation ( RFQ ), Invitation for Bids ( IFB ), or any commitment by the Government to issue a solicitation or award a contract . The National Institute of Standards and Technology ( NIST ) will not pay for any information submitted in response to this notice . Submission of information is voluntary and will not result in any obligation on the part of the Government . NO SOLICITATION DOCUMENTS EXIST AT THIS TIMERequests for solicitation documents will not receive a response . Respondents shall clearly mark any proprietary or restricted information . In the absence of such markings , NIST will assume unlimited rights to all technical data submitted . CONTRACTING OFFICENational Institute of Standards and Technology ( NIST ) Acquisition Management Division100 Bureau Drive , Mail Stop 1640Gaithersburg , MD 20899 - 1640BACKGROUNDTheCHIPS Metrology Programdevelops and advances cutting - edge metrology capabilities for members of the U . S . semiconductor manufacturing ecosystem . This NIST - conducted research program works with device manufacturers , tool vendors , materials suppliers , and other organizations to address critical metrology gaps and spur innovation across seven grand challenge areas . Additional information regarding the CHIPS Metrology Program is available at : https :// www . nist . gov / chips / research - development - programs / metrology - programCHIPS Metrology researchers at NIST requirehigh - quality thin oxide , nitride , and epitaxial germinide films on silicon wafers , along with associated metrology data . NIST is seeking potential vendors capable of providing wafers meeting the classes and technical characteristics described below . Exact specifications for lot size , film thickness , deposition method , and metrology approach may be refined based on responses to this sources sought notice and may reflect vendor - recommended and optimized processes and measurement capabilities . Thin film property measurements using fabrication - line - compatible X - ray characterization techniques and wafer mapping using optical characterization techniques will be required for each deposited wafer . DESCRIPTION OF REQUIRED PRODUCTS AND SERVICESNIST is seeking information from sources capable of providing solutions that meet the objectives described above and the following essential requirements . CLASS 1 : Oxide or Nitride Depositions and Measurements ( Two Sets Required ) Description : At least two available materials from the following list : HfO₂ , TiN , ZrO₂ , SiNQuantity : At least 10 wafers ( 300 mm ), orAt least 15 wafers ( 200 mm ) Technical Specifications : a . Substrate : 200 mm prime double - side polished < 100 > silicon wafers , SEMI standards ; or300 mm prime double - side polished < 100 > silicon wafers , SEMI standardsb . Film Deposition : Approximately 8 nm oxide or nitride film on siliconLess than 5 % thickness uniformity across the waferDeposited by atomic layer deposition ( ALD ) or equivalent methodThickness may be optimized between 5 nm and 15 nm based on vendor recipec . Wafer Characterization : X - ray wafer metrology characterization at five points per wafer ( X - ray reflectivity or X - ray photoelectron spectroscopy ) Optical characterization mapping at 100 points per wafer ( spectroscopic ellipsometry or equivalent ) CLASS 2 : Epitaxial SiGe on Silicon Wafers and Measurement Data ( Two Sets Required ) Description : At least two available germanium ( Ge ) concentrations in the range of 15 % to 30 % Quantity : At least 10 wafers ( 300 mm ), orAt least 15 wafers ( 200 mm ) Technical Specifications : a . Substrate : 200 mm prime double - side polished < 100 > silicon wafers , SEMI standards ; or300 mm prime double - side polished < 100 > silicon wafers , SEMI standardsb . Film Deposition : Approximately 20 nm epitaxial SiGe film on siliconLess than 5 % thickness uniformity and less than 3 % Ge composition uniformity across the waferDeposited by molecular beam epitaxy ( MBE ), chemical vapor deposition ( CVD ), or equivalentThickness may be optimized between 15 nm and 40 nm based on vendor recipeGermanium concentration between 15 % and 30 %, optimized to vendor recipec . Wafer Characterization : X - ray wafer metrology characterization at five points per wafer ( X - ray reflectivity , high - resolution X - ray diffraction , or X - ray photoelectron spectroscopy ) Optical characterization mapping at 100 points per wafer ( spectroscopic ellipsometry or equivalent ) MARKET RESEARCH OBJECTIVESThe purpose of this Sources Sought Notice is to : Identify responsible sources capable of meeting the described wafer deposition and metrology requirementsDetermine the availability ofsmall businesses , including socio - economic categoriesUnderstand industry capabilities , limitations , and optimization approachesInform development of draft specifications and acquisition strategyAssess competitiveness of the requirementInformation received may be used to support acquisition strategy decisions , including potential set - aside determinations . ANTICIPATED ACQUISITIONNIST anticipates issuing aRequest for Quotation ( RFQ ) in thesecond quarter of FY 2026 , with contract award anticipated no later than thefourth quarter of FY 2026 . RESPONSE INSTRUCTIONSInterested parties shall submit a written capability statement addressing the following : Company name , address , Unique Entity Identifier ( UEI ) number , CAGE code , and point - of - contact informationBusiness size and socio - economic status ( if applicable ) Identification of equipment or services offered that meet the objectives described in this noticeManufacturer nameModel numberTechnical specificationsAuthorized reseller status , if applicableDescription of product performance capabilities and customization options , including any limits to customizationIdentification of any requirements that cannot be met and explanation as to why ; include suggestions to improve competitivenessCountry of manufacture for proposed equipment and any anticipated changes in manufacturing locationIdentification of any alternative NAICS codes believed to be more appropriateStandard commercial terms and conditions of sale ( delivery , FOB terms , warranty , extended warranty , manuals , installation , cleanup , etc .) Published pricing , discounts , rebates , or links to publicly available pricingIdentification of public or private sector customers with similar equipment purchasesIdentification of applicable contract vehicles ( e . g ., GSA FSS , GWACs ), including contract numbersAny other information the Government should consider for market research purposesSUBMISSION REQUIREMENTSSubmission Method : EmailEmail Address : donald . graham @ nist . govFormat : Microsoft Word / Excel or PDFPage Limit : 12 pages maximumFont : Times New Roman , 11 - pointPaper Size : 8 . 5 x 11 inchesMargins : Minimum 1 inch on all sidesHeader and footer information that does not contain evaluative content may be included within the margin space .

Maryland

2026-05-02