Dopant Selective Deep Reactive Ion Etching Of 4H-Sic Wafer
One of 10,000+ tenders Taiyo tracks in Ohio.
Source: SAM.gov
NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement. VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT. NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by NASA’s Technical End User Team. We are currently only requesting Capability
- Status
- Prospective
- Sector
- Advanced Electronics, Manufacturing (Industrial)
- Location
- Cleveland, Ohio, United States of America
- Updated
- 3 Nov 2026
- Source
- SAM.gov
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Tender Information
Participants
| Not available for this record. |
Status
Original status | special notice |
Taiyo status | Prospective |
Taiyo last update | 2026-11-03 |
Contact
| Not available for this record. |
Description
Description | NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement. VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT. NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by NASA’s Technical End User Team. We are currently only requesting Capability Statements. |
Original sector | Not Identified |
Location
Country | United States of America (USA) |
State | Ohio |
City | Cleveland |
Source
Source | SAM.gov |
URL |
More Details
Record type | Tender |
Sector | Advanced Electronics, Manufacturing (Industrial) |
Article published date | 2026-10-14 |
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