Ka‑Band Module Development & Complex Modulation Measurement Support
Sector: Advanced Electronics • Location: United Kingdom
Source: Open Contracting Data Standard (OCDS)
Specialist technical input into the DSIT Semiconductor Project: Ka‑Band Module Development and Complex Modulation Measurements, contributing to the development of new measurement capability in high‑frequency RF semiconductor characterisation. The work includes: Characterisation of dielectric properties (e.g., charge mobility, permittivity) of semiconductor materials such as GaAs/GaN from 26.5-40 G
- Status
- Closed
- Sector
- Advanced Electronics
- Location
- United Kingdom
- Updated
- 3 Nov 2026
- Source
- Open Contracting Data Standard (OCDS)
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Participants
| Not available for this record. |
Status
Original status | complete |
Taiyo status | Closed |
Taiyo last update | 2026-11-03 |
Contact
| Not available for this record. |
Description
Description | Specialist technical input into the DSIT Semiconductor Project: Ka‑Band Module Development and Complex Modulation Measurements, contributing to the development of new measurement capability in high‑frequency RF semiconductor characterisation. The work includes: Characterisation of dielectric properties (e.g., charge mobility, permittivity) of semiconductor materials such as GaAs/GaN from 26.5-40 GHz and up to 330 GHz, including 2D wafer property mapping. Development of on‑wafer modulated‑signal measurement capability, testing QPSK, APSK‑16, APSK‑32 signals with varying input powers, with and without predistortion. Measurement of connectorised devices within an NPL 6G testbed. Provision of Ka‑band die samples, attendance at weekly technical meetings, development tasks, and delivery of a loaned connectorised Ka‑band transmit module. |
Location
Country | United Kingdom (UK) |
Source
Source | Open Contracting Data Standard (OCDS) |
URL |
More Details
Record type | Tender |
Sector | Advanced Electronics |
Article published date | 2026-04-02 |
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